Novel method of boron diffusion at low temperatures between 1150 and 1300Ã?°C is used for the formation of both p-i SiC junction\nand i-region in one technological process. As the junction formation conditions in this method are essentially different from those\nin the conventional diffusion (low temperatures and process of diffusion are accompanied by formation of structure defects), it is\nof special interest to identify advantages and disadvantages of a new method of diffusion. Developed SiC p-i-n junction diodes\nhave fast switching time, and the duration of the reverse recovery current is less than 10 ns with a breakdown voltage of 120ââ?¬â??140V.\nFabricated diodes possess capability to operate at temperatures up to 300Ã?°C. As the temperature of diffusion process is lower than\nthe melting temperature of silicon, this new technology allows fabrication of diodes on the base of SiC/Si epitaxial structures.
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